BSS123W transistor equivalent, n-channel logic level enhancement mode field effect transistor.
* 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
* High Density Cell Design for Low RDS(ON)
* Rugged and Reliable
* Ultra Small .
such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power man.
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